| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which avoids an occurrence of a defect and has a high reliability when forming a damascene wiring. <P>SOLUTION: The method comprises the steps of acidifying the surface to be processed by processing a surface to be processed provided on a semiconductor substrate 22 on a polishing cloth by an acidifying processing solvent 27, and transferring the semiconductor substrate 22 from on the polishing cloth 21 to a cleaning unit with the surface to be processed kept acidic. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2005294707(A) |
申请公布日期 |
2005.10.20 |
| 申请号 |
JP20040110411 |
申请日期 |
2004.04.02 |
| 申请人 |
TOSHIBA CORP |
发明人 |
FUKUSHIMA MASARU;MINAMI FUKUGAKU;KURASHIMA NOBUYUKI;YANO HIROYUKI |
| 分类号 |
B24B37/00;C25D7/12;H01L21/00;H01L21/02;H01L21/304;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/304;H01L21/320 |
主分类号 |
B24B37/00 |
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