| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can have a high mechanical strength in a buried region of the semiconductor device and can lighten a stress/strain concentratedly generated in the periphery of the semiconductor element. SOLUTION: The semiconductor device comprises a semiconductor element, and a circuit wiring board which has a semiconductor element and an insulator of a porous structure having first and second main surfaces. At least part of the semiconductor element is buried between the first and second main surfaces. The density of the first region of the porous structure having the semiconductor element buried therein is higher than that of the second region of the porous structure having the semiconductor element not buried therein. And the density varies nearly continuously from the first region to the second region via an interface region between the first and second regions. COPYRIGHT: (C)2006,JPO&NCIPI |
