| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of reducing a stress applied to an adjacent layer by a current constriction structure. SOLUTION: The semiconductor light-emitting element 10 has a p-type semiconductor layer 2 and an n-type semiconductor layer 4 formed on an n-type GaAs substrate 1. An active layer 5 and a current constriction layer 9 composed of a semiconductor, to which an oxygen element is added, are formed between the p-type semiconductor layer 2 and the n-type semiconductor layer 4. The current constriction layer 9 is formed for confining a current to the active layer 5, and has an opening 9h. A p-type semiconductor layer 11 is formed to the opening 9h. The stress between the layer composed of the semiconductor, to which the oxygen element is added, and the semiconductor layer is made smaller than that between an oxide layer and the semiconductor layer. Accordingly, the current constriction layer 9 can reduce the stress applied to the active layer 5 and the adjacent layer as the p-type semiconductor layer 2 in the current constriction structure of the semiconductor light-emitting element 10. COPYRIGHT: (C)2006,JPO&NCIPI |
