发明名称 SURFACE ACOUSTIC WAVE BODY
摘要 PROBLEM TO BE SOLVED: To reduce the thickness of a surface acoustic wave body mainly used for mobile communication equipment. SOLUTION: This surface acoustic wave body is provided with a silicon substrate 12, piezoelectric thin film 13 provided on the top surface of this silicon substrate 12, surface acoustic wave element configured by an interdigital transducer 14 provided on the top surface of this thin film 13, pad electrode 15 electrically connected to this surface acoustic wave element and provided on a portion other than the surface acoustic wave element on the top surface of the thin film 13, through hole 17 penetrating the thin film 13 and the silicon substrate 12 on a lower part of this pad electrode 15, conductive material filled in this through hole 17, and external terminal 24 provided on the bottom surface side of the silicon substrate 12. The pad electrode 15 and the external terminal 24 are each a surface acoustic wave element electrically connected via the conductive material in the through hole 17. Thus, the surface acoustic wave body is reduced in thickness. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005295363(A) 申请公布日期 2005.10.20
申请号 JP20040109781 申请日期 2004.04.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SHIMAMURA TETSUO;HIGASHIYA HIDEKI
分类号 H03H9/25;H03H9/145;(IPC1-7):H03H9/25 主分类号 H03H9/25
代理机构 代理人
主权项
地址