| 摘要 |
There is provided a technique for obtaining improved maximum allowed value for the antenna ratio while inhibiting the damage on the gate insulating film of the MOSFET. A semiconductor device having a configuration that comprises a silicon substrate, a contact interlayer film, a first interconnect interlayer film, a first via interlayer film and a second interconnect interlayer film, all of which are sequentially formed in this order, comprises two protective diodes, which are coupled to a MOSFET via the second interconnect.
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