发明名称 Bump structure for a semiconductor device and method of manufacture
摘要 A semiconductor device employing the bump structure includes a plurality of bump structures arrayed along a substrate in a first direction. Each bump structure has a width in the first direction greater than a pitch gap between successively arrayed bump structures, and at least one bump structure has a sidewall facing in the first direction that is non-conductive.
申请公布号 US2005233569(A1) 申请公布日期 2005.10.20
申请号 US20050091869 申请日期 2005.03.29
申请人 发明人 KWON YONGHWAN;LEE CHUNGSUN;KANG SAYOON
分类号 G02F1/1345;H01L21/44;H01L21/60;H01L23/485;H01L23/50;(IPC1-7):H01L21/44 主分类号 G02F1/1345
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