发明名称 |
Bump structure for a semiconductor device and method of manufacture |
摘要 |
A semiconductor device employing the bump structure includes a plurality of bump structures arrayed along a substrate in a first direction. Each bump structure has a width in the first direction greater than a pitch gap between successively arrayed bump structures, and at least one bump structure has a sidewall facing in the first direction that is non-conductive. |
申请公布号 |
US2005233569(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050091869 |
申请日期 |
2005.03.29 |
申请人 |
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发明人 |
KWON YONGHWAN;LEE CHUNGSUN;KANG SAYOON |
分类号 |
G02F1/1345;H01L21/44;H01L21/60;H01L23/485;H01L23/50;(IPC1-7):H01L21/44 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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