| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory cell having an access transistor and an electric field programmable bistable element. <P>SOLUTION: An access transistor 12 is a MOSFET having a gate region 16, a source region 18, or a drain region 20 coupled to an electric field programmable bistable element 14. The access transistor 12 facilitates selective and controllable programming and reading of the electric field programmable bistable element 14. Furthermore, multiple memory cells, each of which has a distinct electric field programmable bistable element 14 connected to a common access transistor, and a differential memory cell which stores complementary data states are also disclosed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
