| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new structure which can keep a high emission intensity while a light distribution property directly on a light-emitting device is improved using a substrate made of a gallium nitride compound semiconductor, the light-emitting device of which the main emitting surface side is the surface of the substrate. <P>SOLUTION: The semiconductor light emitting device includes a substrate 1 on which a layered structure of an n-type GaN compound semiconductor including an n-type clad layer 2, an active layer 3 and a p-type clad layer is provided, and an electrode connected to the substrate 1. The electrode is provided, such that a part of the surface of the layered structure is removed to expose the surface of the substrate 1 and the electrode is connected directly to the surface of the substrate 1; thereby it is not necessary to dispose an electrode at the main emitting surface side so that the distribution of luminous intensity directly on the light-emitting device can be uniformized. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
