| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus having a high S/N by keeping the uniformity of pixels, reducing ununiformity of the layout of the pixels, and suppressing deterioration in the sensitivity. SOLUTION: The solid-state imaging apparatus includes: a pixel section 1 adopting the Bayer array; a changeover switch section 4 wherein diffusion regions and gate regions are alternately formed in one direction and a MOSFET structure is formed with the gate region 4-1 and the first and second diffusion regions 4-2, 4-3 located at both sides of the gate region 4-1; a GB line selection line 5-1 for selecting GB lines; a GR line selection line 5-2 for selecting GR lines, the lines 5-1, 5-2 being alternately connected to the gate regions; vertical signal lines 3-1 to 3-6 connected to the first diffusion region; sample-hold capacitors C<SB>SH1</SB>to C<SB>SH6</SB>and horizontal selection switches 8-1 to 8-6 connected to the second diffusion region via a clamp circuit 6; horizontal signal lines 9-1, 9-2 to which the horizontal selection switches are alternately connected, and the solid-state imaging apparatus is configured such that a Gb signal or a Gr signal is outputted to the one horizontal signal line, and a R signal or a B signal is outputted to the other horizontal signal line. COPYRIGHT: (C)2006,JPO&NCIPI
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