| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-wavelength semiconductor laser element obtained by continuous semiconductor crystal growing processes. SOLUTION: The laser element comprises a first conductivity type substrate 21 having first and second separated regions on the upside, a first semiconductor laser diode 20b composed of a first conductivity type first clad layer 22, a first active layer 23b and a second conductivity type first clad layer 24b formed on the first region one after another, an inactive region composed of the same layers formed on the second layer as the first conductivity type first clad layer 22, a first active layer 23a and a second conductivity type first clad layer 24a, a second semiconductor laser diode 20a composed of a first conductivity type second clad layer 32a, a second active layer 33a and a second conductivity type second clad layer 34a formed thereon one after another, and a sideway conductive region 25c formed between the first and second semiconductor laser diodes 20b, 20a to electrically connect the second conductivity type first clad layer 24a and the first conductivity type substrate 21. COPYRIGHT: (C)2006,JPO&NCIPI
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