发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To make it possible to suppress the spread of impurities from an over flow layer to an active layer and suppress the decrease in emission efficiency. SOLUTION: The invention comprises a first conduction type first cladding layer 2 formed on a crystal substrate 1, an active layer 4 formed on the first cladding layer, a spread prevention layer 51 which is formed on the active layer and which prevents impurities from being spread to the active layer, an over flow prevention layer 5 of a second conduction type different from the first conduction type, which is formed on the spread prevention layer and which prevents the over flow of carrier poured into the activity layer, and a second conduction type second cladding layer 7 formed on the over flow prevention layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005294753(A) 申请公布日期 2005.10.20
申请号 JP20040111260 申请日期 2004.04.05
申请人 TOSHIBA CORP 发明人 TANAKA AKIRA;ONOMURA MASAAKI
分类号 H01S5/22;H01L29/22;H01S5/34;(IPC1-7):H01S5/22 主分类号 H01S5/22
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