| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a high-performance thin film transistor can be obtained by activating impurities in a source region and a drain region even when heat treatment is performed at a relatively low temperature. SOLUTION: The method of manufacturing semiconductor device includes a starting point section forming step of forming a plurality of starting point sections (125), which become starting points at the time of crystallizing a semiconductor film, on a substrate (11), a semiconductor film forming step of forming the semiconductor film on the substrate having the formed starting point sections (125), and a heat-treating step of forming a plurality of approximate single crystal grains respectively roughly around the starting point sections (125). The method also includes a patterning step of forming a transistor region (133) by patterning the semiconductor film, and an element forming step of forming the thin film transistor by forming a gate insulating film (14) and a gate electrode (15) on the transistor region (133). The starting points (125) are formed so that the approximate single crystal grains may be contained in the source region and drain region (133) in the patterning step. COPYRIGHT: (C)2006,JPO&NCIPI
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