发明名称 TREATMENT DEVICE AND TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a treatment device easily capable of processing the front surface of a matter to be treated within a short period of time utilizing proximity field light. SOLUTION: The treatment device for treating the front surface of a silicon oxide film 52 equipped with a pattern 57 made of a metal on the front surface thereof is provided with a vacuum chamber 1 for receiving the silicon oxide film 52, a gas introducing port 3 for introducing gas into the vacuum chamber 1, a plasma treatment device 11 provided in the vacuum chamber 1 to treat the front surface of the silicon oxide film 52 employing the gas introduced from the gas introducing port 3, and a lamp 10 for treating the silicon oxide film 52 by optical processing by irradiating light to the silicon oxide film 52 to generate near-field light on the bottom 58 of the pattern 57 and to treat the silicon oxide film 52 by optical treatment. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005294541(A) 申请公布日期 2005.10.20
申请号 JP20040107645 申请日期 2004.03.31
申请人 TOSHIBA CORP 发明人 FUKUMIZU HIROYUKI
分类号 C23C16/48;H01L21/3065;H01L21/31;H01L21/316;(IPC1-7):H01L21/316;H01L21/306 主分类号 C23C16/48
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