发明名称 |
High-purity aluminum sputter targets and method of manufacture |
摘要 |
The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 mum. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than -50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.
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申请公布号 |
US2005230011(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040967133 |
申请日期 |
2004.10.19 |
申请人 |
PERRY ANDREW C;GILMAN PAUL S;HUNT THOMAS J |
发明人 |
PERRY ANDREW C.;GILMAN PAUL S.;HUNT THOMAS J. |
分类号 |
C22F1/00;C22F1/04;C23C14/34;(IPC1-7):C22C21/00 |
主分类号 |
C22F1/00 |
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