发明名称 |
Capacitive pressure sensor and method of manufacture |
摘要 |
A capacitive pressure sensor made up of two silicon on insulator (SOI) wafers lying opposite of each other and joined to each other in a vacuum-tight manner, a recess being formed between the two wafers. The first wafer exclusively supports the evaluation circuits required for measuring the applied pressure and a capacitive electrode, and the second wafer has a recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated. The second wafer at the same time forms a cover for the first wafer.
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申请公布号 |
US2005229711(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050107510 |
申请日期 |
2005.04.15 |
申请人 |
OHMS TORSTEN;STOLL OLIVER |
发明人 |
OHMS TORSTEN;STOLL OLIVER |
分类号 |
G01L9/00;B81B3/00;B81B7/00;G01L9/12;H01G7/00;H01L29/84;(IPC1-7):H01G7/00 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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