| 摘要 |
An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed/non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device. |
