发明名称 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K MATERIALS
摘要 <p>Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%.</p>
申请公布号 KR20050101167(A) 申请公布日期 2005.10.20
申请号 KR20057012651 申请日期 2005.07.06
申请人 AXCELIS TECHNOLOGIES, INC.;JSR CORPORATION 发明人 WALDFRIED CARLO;HAN QINGYUAN;ESCORCIA ORLANDO;ALBANO RALPH;BERRY IVAN L.III;SHIOTA ATSUSHI
分类号 C01B33/12;C23C16/56;H01B3/46;H01L21/311;H01L21/312;H01L21/314;H01L21/316;(IPC1-7):H01L21/306;H01L21/31 主分类号 C01B33/12
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