发明名称 |
FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K MATERIALS |
摘要 |
<p>Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%.</p> |
申请公布号 |
KR20050101167(A) |
申请公布日期 |
2005.10.20 |
申请号 |
KR20057012651 |
申请日期 |
2005.07.06 |
申请人 |
AXCELIS TECHNOLOGIES, INC.;JSR CORPORATION |
发明人 |
WALDFRIED CARLO;HAN QINGYUAN;ESCORCIA ORLANDO;ALBANO RALPH;BERRY IVAN L.III;SHIOTA ATSUSHI |
分类号 |
C01B33/12;C23C16/56;H01B3/46;H01L21/311;H01L21/312;H01L21/314;H01L21/316;(IPC1-7):H01L21/306;H01L21/31 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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