| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN single crystal having enough thickness to be independently used as a substrate. <P>SOLUTION: A GaN single crystal 3 having enough thickness to be independently used as a substrate is grown via a buffer layer 2 formed of ZnO on a three-layer structure substrate 1 consisting of a sapphire crystal substrate 1c, an AlN buffer layer 1b formed on the sapphire crystal substrate 1c, and a GaN single crystal surface layer 1c formed on the buffer layer 1b. The ZnO buffer layer 2 is removed by etching to obtain the thick GaN single crystal 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
