| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with an electrostatic discharge protection element which is never broken down even if a large current flow occurs. <P>SOLUTION: The electrostatic discharge protection element consists of a bipolar transistor. In the surface of a base region, a highly doped region of one conductivity type having the dopant concentration higher than that of the base region is so formed as to surround an emitter region. Current is caused to flow to a pn junction constructed by the highly doped region of the electrostatic discharge protection element and an epitaxial layer. Current is also caused to flow to a pn junction constructed by the emitter region and base region of the electrostatic discharge protection element. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
