| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory cell array which has current lines having a lower resistance value, and is more highly integrated. SOLUTION: A MRAM array 1 has lower electrodes 23 formed on a substrate 21, a plurality of bit lines 2 which have a first region R1 divided along an X-axial direction, and a second region R2 with larger cross-sectional areas than those of the first region R1 respectively, and extend in parallel to each other in the X-axial direction, and a plurality of MTJ elements 24 arranged so that it may be inserted among them in each intersection of the lower electrodes 23 and the bit lines 2. Thereby, the bit lines 2 become a shape effectively utilizing the space corresponding to the disposition of other elements such as the MTJ elements 24, compared with that of having the uniform cross-sectional area, and the resistance can be reduced sufficiently in the X-axial direction. As a result, a high integration can be realized. COPYRIGHT: (C)2006,JPO&NCIPI
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