发明名称 CRYSTALLIZING METHOD OF SEMICONDUCTOR MATERIAL AND MANUFACTURING METHOD OF PHOTOCATALYST
摘要 PROBLEM TO BE SOLVED: To crystallize a semiconductor material in a short time by heating selectively and efficiently. SOLUTION: The semiconductor material is crystallized by heating in such a way that amorphous semiconductor material is irradiated with microwave. Since the semiconductor material has few carriers normally, a heating by the microwave is hard because the material is difficult to absorb the microwave, however, an irradiating with ultraviolet rays and visible light, which have energies more than a band gap of the semiconductor material, makes the heating by the microwave possible because carrier density increases. A photocatalyst consisting of anatase type titanium oxide can be manufactured by crystallizing amorphous titanium oxide in such a way that it is heated by microwave irradiation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005294744(A) 申请公布日期 2005.10.20
申请号 JP20040111192 申请日期 2004.04.05
申请人 BRIDGESTONE CORP 发明人 ONO SHINGO;IWABUCHI YOSHINORI;YOSHIKAWA MASAHITO
分类号 C01G23/08;B01J21/06;B01J35/02;B01J37/34;H01L21/20;(IPC1-7):H01L21/20 主分类号 C01G23/08
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