发明名称 MATERIAL RESISTANT TO ACID ETCHING, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT USING THE SAME, AND COPOLYMER
摘要 PROBLEM TO BE SOLVED: To provide a material resistant to acid etching, particularly a material resistant to acid etching using concentrated hydrofluoric acid, for use in the frosting process for improving on the light extracting efficiency of a light emitting element, sufficiently resistant to acid and, concurrently, high in alkali-solubility. SOLUTION: The material resistant to acid etching has the repeating unit represented by formula (1). In formula (1), R<SP>1</SP>is a hydrogen atom or a methyl group, R<SP>3</SP>is a cyclic group selected from the group consisting of aliphatic cyclic groups and aromatic groups, and R<SP>4</SP>is a polar group. R<SP>2</SP>is represented by formula (2), and n is 0 or 1. In formula (2), R<SP>5</SP>is a hydrogen atom or a methyl group. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005290218(A) 申请公布日期 2005.10.20
申请号 JP20040108108 申请日期 2004.03.31
申请人 TOSHIBA CORP 发明人 ASAKAWA KOUJI;OHASHI KENICHI;FUJIMOTO AKIRA
分类号 C08K5/28;C08F20/26;C08L33/14;(IPC1-7):C08F20/26 主分类号 C08K5/28
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