| 摘要 |
A new transparent conducting oxide (TCO), which can be expressed as Al<SUB>x</SUB>Ga<SUB>3-x-y</SUB>In<SUB>5+y</SUB>Sn<SUB>2-z</SUB>O<SUB>16-2z</SUB>; 0<=x<1, 0<y<3, 0<=z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al<SUB>2</SUB>O<SUB>3</SUB>-Ga<SUB>2</SUB>O<SUB>3</SUB>-In<SUB>2</SUB>O<SUB>3</SUB>-SnO<SUB>2 </SUB>system is able to increase the brightness at 1.5~2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.
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