发明名称 |
Method for the production of a bipolar transistor |
摘要 |
The invention relates to a method for producing a bipolar transistor. A semiconductor substrate is provided that encompasses a collector area of a first conductivity type, which is embedded therein and is bare towards the top. A monocrystalline base area is provided and a base-connecting area of the second conductivity type is provided above the base area. An insulating area is provided above the base-connecting area and a window is formed in the insulating area and the base-connecting area so as to at least partly expose the base area. An insulating sidewall spacer is provided in the window in order to insulate the base-connecting area. An emitter layer which forms a monocrystalline emitter area above the base area and a polycrystalline emitter area above the insulating area and the sidewall spacer is differentially deposited and structured, and a tempering step is carried out.
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申请公布号 |
US2005233536(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050153062 |
申请日期 |
2005.06.15 |
申请人 |
BOCK JOSEF;MEISTER THOMAS;STENGL REINHARD;SCHAFER HERBERT |
发明人 |
BOCK JOSEF;MEISTER THOMAS;STENGL REINHARD;SCHAFER HERBERT |
分类号 |
H01L21/331;H01L29/06;H01L29/08;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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