| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a through electrode excellent in performance and manufacture stability as an electrode. <P>SOLUTION: The through electrode 135 which is constituted of a conductive small diameter plug 119 and a conductive large diameter plug 131 is arranged on the semiconductor device 100. Cross section of the small diameter plug 119 is made greater than cross section and diameter of a connection plug 123 and smaller than cross section and diameter of the large diameter plug 131, respectively. A projection 141 wherein the small diameter plug 119 is projected from a silicon substrate 101 is inserted into an upper surface of the large diameter plug 131. An upper surface of the small diameter plug 119 is connected to a first wiring 121. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
