| 发明名称 |
Method for fabricating ferroelectric capacitive element and ferroelectric capacitive element |
| 摘要 |
A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first ferroelectric film including bismuth in a first concentration on the lower electrode; forming a second ferroelectric film including bismuth in a second concentration on the first ferroelectric film; performing annealing after forming the first ferroelectric film and the second ferroelectric film; and forming an upper electrode made of a second conductive film on the second ferroelectric film after the annealing. The first conductive film is a metal film more easily etched than a platinum film, and the second ferroelectric film is formed in such a manner that the second concentration is lower than the first concentration before the annealing.
|
| 申请公布号 |
US2005233476(A1) |
申请公布日期 |
2005.10.20 |
| 申请号 |
US20050081815 |
申请日期 |
2005.03.17 |
| 申请人 |
TATSUNARI TOSHITAKA |
发明人 |
TATSUNARI TOSHITAKA |
| 分类号 |
H01L27/04;H01L21/00;H01L21/02;H01L21/316;H01L21/822;H01L21/8246;H01L27/105;H01L29/76;H01L29/78;H01L29/94;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
