发明名称 Re-writable memory with multiple memory layers
摘要 A re-writable memory with multiple memory layers. Using both terminals of a memory cell in a stacked cross point structure for selection purposes allows multiple layers of conductive lines to be selected as long as there is only one memory cell that has two terminals selected. Sharing logic over multiple layers allows driver sets to be reused.
申请公布号 US2005231992(A1) 申请公布日期 2005.10.20
申请号 US20050151880 申请日期 2005.06.13
申请人 UNITY SEMICONDUCTOR CORPORATION 发明人 RINERSON DARRELL;CHEVALLIER CHRISTOPHE J.;KINNEY WAYNE;LONGCOR STEVEN W.;WARD EDMOND R.
分类号 G11C11/56;G11C13/00;G11C16/02;H01L27/24;(IPC1-7):G11C5/00 主分类号 G11C11/56
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