| 摘要 |
PROBLEM TO BE SOLVED: To preventing separation of a film between insulating films by improving adhesion between the insulating films for use in a multilayer wiring structure, thereby improving a yield and reliability. SOLUTION: A semiconductor device 1 has an insulating film for via layer 21 for forming a via on a substrate 11, and an insulating film for wiring layer 22 for forming a wiring layer on the insulating film 21. The insulating film 22 comprises a stacked film of a first insulating film 23 and a second insulating film 24, an edge of the first insulating film 23 is formed such that it is situated at a more inner side than an edge of the second insulating film 24, and edges of the insulating films 22 and 21 are formed at positions corresponding to each other. COPYRIGHT: (C)2006,JPO&NCIPI
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