METHOD FOR MANUFACTURING HIGH-RESISTANCE SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a high-resistance silicon wafer which can maintain a high resistance, can avoid a large resistivity variation, and can have an excellent device characteristic, even after heat treatment in a device manufacturing step. SOLUTION: In a method for manufacturing a high-resistance silicon wafer, (1) the wafer has a resistivity of 100Ωcm or higher, oxygen donor generation quantities for heating temperatures and heating times in heat treatment of device manufacture for residual oxygen concentrations in the wafer are previously found, an oxygen donor generation quantity after the heat treatment is predicted on the basis of conditions of the heat treatment in the device manufacturing step which are applied to the residual oxygen concentration of the wafer to be manufactured and to the wafer, and the predicted value for the oxygen donor generation quantity is compared with the oxygen donor allowable quantity in the device manufacturing step to evaluate a characteristic in the device manufacturing step. (2) The oxygen donor allowable quantity can be set at 1×1013atoms/cm3after the heat treatment in the device manufacturing step. COPYRIGHT: (C)2006,JPO&NCIPI