| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for exposure for a charged particle beam exposure device that can be reduced in defective product by correcting the influence of back-scattering electrons by performing the minimum trial exposure. SOLUTION: Part of back-scattering electrons discharged from a wafer 3 is detected by means of a back-scattered electron detector 5. Then exposure is performed on each subfield and a back-scattering electron coefficientηis found, when the mean value of the current density of a charged particle beam projected until the exposure of an exposing area of one chip quantity ends is A, the pattern density in the exposing area of one chip quantity is Md, and the detected sum total of the amount of back-scattering electrons is BSE when the exposing area of one chip quantity is exposed. Then, based on the back-scattering electron coefficientηand the previously found luminous exposure correction factor corresponding to the position of a sensitive substrate, the luminous exposure required for exposing each unit exposing area is corrected at every prescribed unit exposing area on the wafer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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