发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To protect a transistor in a circuit even when a voltage not less than the withstand voltage of the transistor is externally applied. SOLUTION: The semiconductor device comprises a first circuit provided with the transistor, a terminal for connecting the first circuit to a second circuit to which a predetermined voltage is applied, a plurality of first protection parts connected in series between the terminal and a positive power source, and a plurality of second protections connected in series between the terminal and a negative power source. Further, in another embodiment, the semiconductor device comprises a plurality of first protections connected in series between one of the positive power source and the negative power source and a voltage application part applied with a first voltage, and a plurality of second protections connected in series between the voltage application and the terminal. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005294560(A) 申请公布日期 2005.10.20
申请号 JP20040108022 申请日期 2004.03.31
申请人 SHARP CORP 发明人 MONARI TOSHIHIKO
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L23/58;H01L27/02;H01L27/06;H01L27/088;H01L29/00;H02H9/00;H03K17/0814;H03K17/10;H03K19/003;H03K19/0185;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L27/04
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