| 摘要 |
Provided is directed to a NAND flash memory device and a method of programming the same, which can improve integration of the device by removing a common source line connecting with a source line coupled to a plurality of cell blocks, control a voltage applied to a source line by each cell block, and rise a precharge level in a channel area by applying a pumping voltage to the source line relatively having low capacitance instead of a bitline having a large capacitance, and as a result of those, the NAND flash memory device can reduce disturbance, use a lower voltage than a power supply voltage on the bitline, which leads to reduce a current consumption.
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