Direct tunneling memory with separated transistor and tunnel areas

摘要

A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region; a gate insulating film formed on a channel region of the select transistor region; a tunnel insulating film formed on a partial area of the direct tunnel element region and having a thickness different from a thickness of the gate insulating film; a continuous floating gate electrode formed above the gate insulating film and the tunnel insulating film; an inter-electrode insulating film formed on a surface of the floating gate electrode; a control gate electrode facing the floating gate electrode via the inter-electrode insulating film; and a pair of source/drain regions formed on both sides of the channel region of the select transistor region and not overlapping the tunnel insulating film.