METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a measuring technique by which probe measurement corresponding to the thickness reduction of a wafer of a power semiconductor element having an electrode on the surface and the rear face of the wafer can be easily realized in a manufacturing technique for a semiconductor device. SOLUTION: The method for manufacturing the power semiconductor element such as an IGBT and a power MOSFET is composed as follows. The power semiconductor element is formed to the wafer 61. A tape 64 with an opening part is pasted on the surface of the wafer 61. The electric characteristics of the power semiconductor element are measured by electrically connecting to the electrode on the surface of the wafer 61 and the electrode on the rear face of the wafer 61 via the opening part of the tape 64. The tape 64 pasted on the surface of the wafer 61 is peeled off. A dicing tape is pasted on the rear face of the wafer 61. The wafer 61 is cut into chips for individual power semiconductor elements. The semiconductor device with a package structure is assembled. COPYRIGHT: (C)2006,JPO&NCIPI