| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device having reliability that is equivalent to that of a semiconductor device manufactured by the conventional manufacturing method can be manufactured by simplifying the manufacturing process than the conventional method. SOLUTION: The method of manufacturing the semiconductor device includes a step P3 of forming a trench mask on the surface of an SOI substrate, a step P5 of forming a trench having a depth reaching a buried oxidized film into the semiconductor layer of the SOI substrate by using the trench mask, and a step P8 of burying PolySi in the trench. The method also includes a step P9 of performing etching back for removing the PolySi formed on the surface of the semiconductor layer of the SOI substrate. In the trench mask forming step P3, an SiO<SB>2</SB>film to which a conductive impurity is unadded is formed by the CVD method and, in the trench forming step P5, the trench having a trench width of≤1.2μm is formed. In addition, the method also includes a step P6 of removing the trench mask before the PolySi burring step P8. COPYRIGHT: (C)2006,JPO&NCIPI
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