SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can perform erasing and/or writing operation rapidly and at low voltage, and which can simplify the peripheral circuit and has little variation in device characteristics; and to provide its manufacturing method. SOLUTION: On both sides of the gate of a silicon substrate 101, diffusion regions 106 and 107 are formed. Near the tips of the diffusion regions 106 and 107 under the gate in the silicon substrate 101, halo regions 109 and 110 are formed. Furthermore, by implanting arsenic ions into part of boundary regions 121 and 122 between the diffusion regions 106 and 107 which form pn junctions and the halo regions 109 and 110, crystal defects are formed in a concentration of 1×1015cm-3to 1×1019cm-3. COPYRIGHT: (C)2006,JPO&NCIPI