METHOD OF FORMING METAL THIN-FILM LAYER ON CONDUCTIVE ITO FILM OR ON GLASS SUBSTRATE SURFACE AS BASE SUBSTRATE OF ITO FILM, AND METAL THIN-FILM LAYER ON CONDUCTIVE ITO FILM OR ON GLASS SUBSTRATE SURFACE AS BASE SUBSTRATE OF THE ITO FILM

摘要

PROBLEM TO BE SOLVED: To provide a method, capable of forming a fine metal thin film pattern excellent in adherence properties on the surface of a conductive ITO film and a glass substrate of a base substrate, with high drawing precision, high workability, and high reproducibility. SOLUTION: The thin film layer of transition metal is formed by applying a solvent formed by dissolving transition metal compound, containing organic anion and cation of transition metal in organic solvent on the ITO film and on the surface of the glass substrate of a base substrate, and applying heat treatment thereto. The fine metal thin-film pattern with superior adherence properties is formed on the surface of the transition metal thin film layer, by applying a liquid, in which metal fine particles with average size of 1 to 100 nm are dispersed at a prescribed thickness, and by forming a layer in which fine metal particles are sintered mutually, by heating and sintering the above. COPYRIGHT: (C)2006,JPO&NCIPI