发明名称 |
Memory devices with page buffer having dual registers and metod of using the same |
摘要 |
A nonvolatile memory device and programming method and apparatus therefore are described that include operatively coupled first and second sense amplifiers having first and second data registers or latches, a storage circuit for storing a data of the second amplifier, a pass/fail check circuit for checking the content of the second data register whether a cell of the memory device has been sufficiently programmed and a restore circuit for resetting the second data register for reprogramming the device until sufficiently programmed.
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申请公布号 |
US2005232011(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050153638 |
申请日期 |
2005.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNE;KWON OH-SUK;IM HEUNG-SOO |
分类号 |
G01R31/28;G11C7/10;G11C11/34;G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/24;G11C16/34;G11C29/12;(IPC1-7):G11C11/34 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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