发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device. The method comprises steps of providing a substrate having a first metal layer and a second metal layer formed thereon. A first dielectric layer, an etching stop layer having a first opening located above the first metal layer and a second opening located above the second metal layer and a second dielectric layer are formed sequentially. A portion of the first dielectric layer and a portion of the second dielectric layer are removed to form a first trench exposing the first metal layer. A capacitor dielectric layer is formed over the substrate. A third opening is formed in the capacitor dielectric layer. A portion of the second dielectric layer and a portion of the first dielectric layer exposed by the third opening are removed to form an opening. A metal layer is formed to fill out the first trench and the opening.
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申请公布号 |
US2005233519(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050905610 |
申请日期 |
2005.01.12 |
申请人 |
CHANG KO-HSING;HUANG CHIU-TSUNG |
发明人 |
CHANG KO-HSING;HUANG CHIU-TSUNG |
分类号 |
H01L21/02;H01L21/4763;H01L21/76;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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