| 发明名称 |
Method of improving polysilicon film crystallinity |
| 摘要 |
A method of improving a polysilicon film crystallinity in a sequential lateral solidification process is provided. A mask having a main pattern portion and a compensating pattern portion is provided. The main pattern portion defines a laser beam pattern scanning and transforming an amorphous silicon film into a polysilicon film. The compensating pattern portion adjacent to the main pattern portion adjusts the energy of the laser beam injected to the polysilicon film to improve the grain shape thereof.
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| 申请公布号 |
US2005233224(A1) |
申请公布日期 |
2005.10.20 |
| 申请号 |
US20040941720 |
申请日期 |
2004.09.15 |
| 申请人 |
TOPPOLY OPTOELECTRONICS CORP. |
发明人 |
TSENG CHANG-HO;CHANG SHIH-CHANG;TSAI YAW-MING;HUNG YU-TING;LEE RYAN |
| 分类号 |
G02B5/08;G02B7/182;G03B21/56;G03F1/14;G03F9/00;G21K5/10;H01J37/08;H01L21/20;H01L21/77;H01L21/84;H01L29/04;H01L29/10;H01L29/786;H01L31/036;(IPC1-7):H01J37/08 |
主分类号 |
G02B5/08 |
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