发明名称 Memory controller controlling cashed dram
摘要 According to the semiconductor device and method of the present invention, because regular cache memories subjected to hit checks are distinguished from spare cache memories not subjected to hit checks, and because sense amplifiers are also used as cache memories, built-in cache memories are operated faster and at low power consumption. A memory control unit is capable of distinguishing regular memories subjected to hit checks and spare memories not subjected to hit checks. This way, if a hit check is a miss, one of the cache memories not subjected to a hit checks is subjected to a subsequent hit operation and another one of the cache memories not subjected to hit checks is not subjected to the next hit check operation.
申请公布号 US2005232060(A1) 申请公布日期 2005.10.20
申请号 US20050155504 申请日期 2005.06.20
申请人 HITACHI, LTD. 发明人 MIURA SEIJI
分类号 G06F12/00;G06F12/08;G06F12/12;G11C15/00;(IPC1-7):G11C5/00 主分类号 G06F12/00
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