| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can improve the writing speed of data. <P>SOLUTION: The nonvolatile semiconductor storage device is provided with a memory array where a plurality of memory cells each enabling electrical update of information are arranged. This memory cell comprises a semiconductor substrate, an element isolating region formed on the semiconductor substrate, an element region divided with the element isolating region, a first insulating film formed on the element region, a floating gate formed on the first insulating film, a second insulating film formed on the floating gate and has the dielectric constant which is higher than that of a silicon nitride film, and a control gate formed on the second insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
