发明名称 Growth of carbon nanotubes at low temperature
摘要 A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.
申请公布号 US2005233263(A1) 申请公布日期 2005.10.20
申请号 US20040827915 申请日期 2004.04.20
申请人 APPLIED MATERIALS, INC. 发明人 PARK BEOM S.;CHOI SOO Y.;WHITE JOHN M.
分类号 C01B31/02;C30B25/00;C30B29/02;C30B29/60;G03F7/00;(IPC1-7):G03F7/00 主分类号 C01B31/02
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