发明名称 |
Growth of carbon nanotubes at low temperature |
摘要 |
A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.
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申请公布号 |
US2005233263(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040827915 |
申请日期 |
2004.04.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
PARK BEOM S.;CHOI SOO Y.;WHITE JOHN M. |
分类号 |
C01B31/02;C30B25/00;C30B29/02;C30B29/60;G03F7/00;(IPC1-7):G03F7/00 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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