发明名称 Device based on partially oxidized porous silicon and method for its production
摘要 Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 mum distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.
申请公布号 US2005233438(A1) 申请公布日期 2005.10.20
申请号 US20040967090 申请日期 2004.10.15
申请人 INFINEON TECHNOLOGIES AG 发明人 DERTINGER STEPHAN;FRITZ MICHAELA;FUCHS KARIN;HANEDER THOMAS;LEHMANN VOLKER;MARTIN ALFRED;MARZ REINHARD
分类号 B01J19/00;B01L3/00;C30B33/00;C40B40/06;C40B40/10;C40B60/14;G01N33/543;(IPC1-7):C12M3/00 主分类号 B01J19/00
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