| 摘要 |
The present invention provides a method for preventing an oxide film from becoming thick due to the reaction of the oxide film and a floating gate in a method for manufacturing a flash memory device having a dielectric layer consisting of at least one oxide film between the floating gate and a control gate. To this end, a Si-F bonding layer is formed on the surface of a silicon film constituting the floating gate. The Si-F bonding layer is annealed in a nitrogen gas atmosphere to form a Si-N bonding layer. A dielectric layer is then formed.
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