| 摘要 |
A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO<SUB>2 </SUB>film provided on the silicon substrate, copper films embedded in the SiO<SUB>2 </SUB>film, TiN films covering an upper face of a boundary region between an upper face of copper films and the copper films, and the SiO<SUB>2 </SUB>film, and SiON films covering an upper face of the TiN films. |
