发明名称 |
METHOD AND SYSTEM FOR CONTROL OF PROCESSING CONDITIONS IN PLASMA PROCESSING SYSTEMS |
摘要 |
Methods and systems are provided for processing a film over a substrate in a process chamber using plasma deposition. A plasma is formed in the process chamber and a process gas mixture suitable for processing the film is flowed into the process chamber under a set of process conditions. The process gas mixture may include a silicon-containing gas and an oxygen-containing gas to deposit a silicate glass, which may in some instances also be doped to obtain specifically desired optical properties. A parameter is monitored during processing of the film so that the process conditions may be changed in accordance with a correlation among a value of the parameter, an optical property of the film, and the process conditions. |
申请公布号 |
WO2005098897(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
WO2005US11000 |
申请日期 |
2005.03.31 |
申请人 |
APPLIED MATERIALS, INC.;SUN, SHENG;MAK, CECILIA;LAW, KAM |
发明人 |
SUN, SHENG;MAK, CECILIA;LAW, KAM |
分类号 |
C23C4/12;C23C8/36;C23C16/52;G02B6/132;H01J37/32;H01L21/66 |
主分类号 |
C23C4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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