| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device includes a base insulation film formed on a semiconductor substrate via another layer, a metal thin-film resistance formed on the base insulation film, and a laser beam interruption film of a metal material interposed between the semiconductor substrate and the base insulation film.
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| 申请公布号 |
US2005230833(A1) |
申请公布日期 |
2005.10.20 |
| 申请号 |
US20050079315 |
申请日期 |
2005.03.15 |
| 申请人 |
KATO HIDENORI;MORI MASAHIDE |
发明人 |
KATO HIDENORI;MORI MASAHIDE |
| 分类号 |
H01L27/04;B21B1/00;B21C1/00;B21F1/00;H01C7/00;H01L21/822;H01L27/01;(IPC1-7):B21B1/00 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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