发明名称 FILM FORMING METHOD, PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5x10<-5 >qgamma (mm) given with respect to a surface tension gamma (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5x10<-5 >(m.sec/N).</p>
申请公布号 KR20050101154(A) 申请公布日期 2005.10.20
申请号 KR20050092770 申请日期 2005.10.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO SHINICHI;EMA TATSUHIKO;HAYASAKI KEI;NAKATA REMPEI;YAMADA NOBUHIDE;OKUMURA KATSUYA
分类号 H01L21/027;H01L21/00;H01L21/20;H01L21/288;H01L21/316;(IPC1-7):H01L21/027 主分类号 H01L21/027
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