| 摘要 |
FIELD: semiconductor magnetic field sensors. ^ SUBSTANCE: proposed Hall-effect magnetic field sensor has arsenide-gallium chip incorporating semi-insulating substrate, magnetically sensitive epitaxial n layer, current and potential contacts; thickness of magnetically sensitive later (d) is specified in the range of d = (0.2 - 1.5) muv and mean concentration of electrons (n) in mentioned layer is chosen from following expression: n.d=(3,3-20).1011 cm2. ^ EFFECT: enhanced specific magnetic sensitivity without noticeable increase in residual voltage and noise level or reducing operating stability. ^ 2 cl, 1 dwg |
